Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes
Identifieur interne : 017D24 ( Main/Repository ); précédent : 017D23; suivant : 017D25Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes
Auteurs : RBID : Pascal:97-0567787Descripteurs français
- Pascal (Inist)
- 8560J, 7866F, 7845, Etude expérimentale, Etude théorique, Diode électroluminescente, Emission stimulée, Gallium nitrure, Indium nitrure, Epaisseur, Structure électronique, Hétérojonction, Contrainte, Indium composé, Gallium composé, Semiconducteur III-V, Déplacement spectral, Puits quantique semiconducteur, Bande conduction, Bande valence, Etat interface, Effet contrainte.
English descriptors
- KwdEn :
- Conduction bands, Electronic structure, Experimental study, Gallium compounds, Gallium nitrides, Heterojunctions, III-V semiconductors, Indium compounds, Indium nitrides, Interface states, Light emitting diodes, Semiconductor quantum wells, Spectral shift, Stimulated emission, Stress effects, Stresses, Theoretical study, Thickness, Valence bands.
Abstract
We report on the band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes with varying widths and barrier thicknesses of the quantum wells. In these devices, we observe that the stimulated emission peak wavelength shifts to shorter values with decreasing well thickness. From the comparison of the results of the quantum mechanical calculations of the subbands energies with the measured data, we estimate the effective conduction- and valence-band discontinuities at the GaN-In0.13Ga0.87N heterointerface to be approximately 130-155 and 245-220 meV, respectively. We also discuss the effect of stress on the estimated values of band discontinuities. © 1997 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes</title><author><name sortKey="Sun, C J" uniqKey="Sun C">C. J. Sun</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>APA Optics Inc., 2950 N. E. 84th Lane, Blaine, Minnesota 55434</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>APA Optics Inc., 2950 N. E. 84th Lane, Blaine</wicri:cityArea></affiliation></author><author><name sortKey="Zubair Anwar, M" uniqKey="Zubair Anwar M">M. Zubair Anwar</name></author><author><name sortKey="Chen, Q" uniqKey="Chen Q">Q. Chen</name></author><author><name sortKey="Yang, J W" uniqKey="Yang J">J. W. Yang</name></author><author><name sortKey="Asif Khan, M" uniqKey="Asif Khan M">M. Asif Khan</name></author><author><name sortKey="Shur, M S" uniqKey="Shur M">M. S. Shur</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590</s1><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy</wicri:cityArea></affiliation></author><author><name sortKey="Bykhovski, A D" uniqKey="Bykhovski A">A. D. Bykhovski</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903-2442</s1><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of Virginia, Charlottesville</wicri:cityArea></affiliation></author><author><name sortKey="Liliental Weber, Z" uniqKey="Liliental Weber Z">Z. Liliental Weber</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Lawrence Berkeley National Laboratory, Berkeley</wicri:cityArea></affiliation></author><author><name sortKey="Kisielowski, C" uniqKey="Kisielowski C">C. Kisielowski</name><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>Department of Materials Science and Mineral Engineering, University of California at Berkeley, Berkeley, California 94720</s1><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Materials Science and Mineral Engineering, University of California at Berkeley, Berkeley</wicri:cityArea></affiliation></author><author><name sortKey="Smith, M" uniqKey="Smith M">M. Smith</name><affiliation wicri:level="2"><inist:fA14 i1="06"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506</s1><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Lin, J Y" uniqKey="Lin J">J. Y. Lin</name></author><author><name sortKey="Xiang, H X" uniqKey="Xiang H">H. X. Xiang</name></author></titleStmt><publicationStmt><idno type="inist">97-0567787</idno><date when="1997-06-02">1997-06-02</date><idno type="stanalyst">PASCAL 97-0567787 AIP</idno><idno type="RBID">Pascal:97-0567787</idno><idno type="wicri:Area/Main/Corpus">018375</idno><idno type="wicri:Area/Main/Repository">017D24</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Conduction bands</term><term>Electronic structure</term><term>Experimental study</term><term>Gallium compounds</term><term>Gallium nitrides</term><term>Heterojunctions</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Indium nitrides</term><term>Interface states</term><term>Light emitting diodes</term><term>Semiconductor quantum wells</term><term>Spectral shift</term><term>Stimulated emission</term><term>Stress effects</term><term>Stresses</term><term>Theoretical study</term><term>Thickness</term><term>Valence bands</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560J</term><term>7866F</term><term>7845</term><term>Etude expérimentale</term><term>Etude théorique</term><term>Diode électroluminescente</term><term>Emission stimulée</term><term>Gallium nitrure</term><term>Indium nitrure</term><term>Epaisseur</term><term>Structure électronique</term><term>Hétérojonction</term><term>Contrainte</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Déplacement spectral</term><term>Puits quantique semiconducteur</term><term>Bande conduction</term><term>Bande valence</term><term>Etat interface</term><term>Effet contrainte</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on the band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes with varying widths and barrier thicknesses of the quantum wells. In these devices, we observe that the stimulated emission peak wavelength shifts to shorter values with decreasing well thickness. From the comparison of the results of the quantum mechanical calculations of the subbands energies with the measured data, we estimate the effective conduction- and valence-band discontinuities at the GaN-In<sub>0.13</sub>Ga<sub>0.87</sub>N heterointerface to be approximately 130-155 and 245-220 meV, respectively. We also discuss the effect of stress on the estimated values of band discontinuities. © 1997 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>70</s2></fA05><fA06><s2>22</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes</s1></fA08><fA11 i1="01" i2="1"><s1>SUN (C. J.)</s1></fA11><fA11 i1="02" i2="1"><s1>ZUBAIR ANWAR (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHEN (Q.)</s1></fA11><fA11 i1="04" i2="1"><s1>YANG (J. W.)</s1></fA11><fA11 i1="05" i2="1"><s1>ASIF KHAN (M.)</s1></fA11><fA11 i1="06" i2="1"><s1>SHUR (M. S.)</s1></fA11><fA11 i1="07" i2="1"><s1>BYKHOVSKI (A. D.)</s1></fA11><fA11 i1="08" i2="1"><s1>LILIENTAL WEBER (Z.)</s1></fA11><fA11 i1="09" i2="1"><s1>KISIELOWSKI (C.)</s1></fA11><fA11 i1="10" i2="1"><s1>SMITH (M.)</s1></fA11><fA11 i1="11" i2="1"><s1>LIN (J. Y.)</s1></fA11><fA11 i1="12" i2="1"><s1>XIANG (H. X.)</s1></fA11><fA14 i1="01"><s1>APA Optics Inc., 2950 N. E. 84th Lane, Blaine, Minnesota 55434</s1><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590</s1><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903-2442</s1><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1><sZ>8 aut.</sZ></fA14><fA14 i1="05"><s1>Department of Materials Science and Mineral Engineering, University of California at Berkeley, Berkeley, California 94720</s1><sZ>9 aut.</sZ></fA14><fA14 i1="06"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506</s1><sZ>10 aut.</sZ></fA14><fA20><s1>2978-2980</s1></fA20><fA21><s1>1997-06-02</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1997 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>97-0567787</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on the band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes with varying widths and barrier thicknesses of the quantum wells. In these devices, we observe that the stimulated emission peak wavelength shifts to shorter values with decreasing well thickness. From the comparison of the results of the quantum mechanical calculations of the subbands energies with the measured data, we estimate the effective conduction- and valence-band discontinuities at the GaN-In<sub>0.13</sub>Ga<sub>0.87</sub>N heterointerface to be approximately 130-155 and 245-220 meV, respectively. 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